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avalanche-multiplication noise

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  • Avalanche photodiode — Avalanche photodiodes (APDs) are photodetectors that can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage (typically 100 200 V in silicon), APDs show an internal current gain effect (around 100) …   Wikipedia

  • Noise-figure meter — A noise figure meter is an instrument for measuring the noise figure of an amplifier, mixer, or similar device. An example instrument is the 1983 era Agilent 8970A. Contents 1 Measurement methods 2 Noise source 2.1 Thermal noise …   Wikipedia

  • Avalanche-Photodiode — Avalanche Photodioden bzw. Lawinenphotodioden (englisch avalanche photodiode, APD), sind hochempfindliche und schnelle Photodioden. Sie nutzen den inneren photoelektrischen Effekt zur Ladungsträgererzeugung und den Lawinendurchbruch… …   Deutsch Wikipedia

  • Single-Photon Avalanche Diode — In optoelectronics the term Single Photon Avalanche Diode (SPAD)(also know as a Geiger mode APD or G APD) identifies a class of solid state photodetectors based on a reverse biased p n junction in which a photo generated carrier can trigger an… …   Wikipedia

  • IMPATT diode — An IMPATT diode (IMPact ionization Avalanche Transit Time) is a form of high power diode used in high frequency electronics and microwave devices. They are typically made with silicon carbide owing to their high breakdown fields.They operate at… …   Wikipedia

  • Proportional counter — A proportional counter is a measurement device to count particles of ionizing radiation and measure their energy.A proportional counter is a type of Gaseous ionization detector it works on the same principle as the Geiger Müller counter, but uses …   Wikipedia

  • Fotodiodo de avalancha — Los fotodiodos de avalancha (APDs) son fotodetectores que se pueden considerar como el equivalente semiconductor de los fotomultiplicadores. Aplicando un alto voltaje en inversa (típicamente 100 200 V en silicio), los APD muestran un efecto… …   Wikipedia Español

  • PIN diode — Layers of a PIN diode A PIN diode is a diode with a wide, lightly doped near intrinsic semiconductor region between a p type semiconductor and an n type semiconductor region. The p type and n type regions are typically heavily doped because they… …   Wikipedia

  • Indium gallium arsenide — (InGaAs) is a semiconductor composed of indium, gallium and arsenic. It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.… …   Wikipedia

  • Radiation hardening — is a method of designing and testing electronic components and systems to make them resistant to damage or malfunctions caused by ionizing radiation (particle radiation and high energy electromagnetic radiation),[1] such as would be encountered… …   Wikipedia

  • radiation measurement — ▪ technology Introduction       technique for detecting the intensity and characteristics of ionizing radiation, such as alpha, beta, and gamma rays or neutrons, for the purpose of measurement.       The term ionizing radiation refers to those… …   Universalium

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